GaSb-InAs Light Emitting Diodes are designed for emitting at a spectral Range 1.6…4.6 um. They are fabricated from heterostructures (HS) grown by liquid-phase epitaxy (LPE). The output emission can be modulated by current flowing in a forward direction. Devices can be mounted in standard TO-18 package or in TO-5 package with thermocooler and thermistot inside and equipped with parabolic reflector to collimate output beam.